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KU047N08P

KEC
Part Number KU047N08P
Manufacturer KEC
Description N-ch Trench MOS FET
Published Sep 21, 2013
Detailed Description SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching t...
Datasheet PDF File KU047N08P PDF File

KU047N08P
KU047N08P

Overview
SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATURES VDSS= 75V, ID= 130A Drain-Source ON Resistance : RDS(ON)=4.
7m (Max.
) @VGS = 10V D N N A KU047N08P N-ch Trench MOS FET O C F E G B Q DIM MILLIMETERS _ 0.
2 9.
9 + A B C D E I K M L J H P F G H I J K L M N O 15.
95 MAX 1.
3+0.
1/-0.
05 _ 0.
1 0.
8 + _ 0.
2 3.
6 + _ 0.
1 2.
8 + 3.
7 0.
5+0.
1/-0.
05 1.
5 _ 0.
3 13.
08 + 1.
46 _ 0.
1 1.
4 + _ 0.
1 1.
27 + _ 0.
2 2.
54 + _ 0.
2 4.
5 + _ 0.
2 2.
4 + _ 0.
2 9.
2 + MAXIMUM RATING (Tc=25 ) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 Tj Tstg SYMBOL VDSS VGSS ID IDP EAS EAR dv/dt PD RATING 75 20 130 83 400* 700 9 4.
5 167 1.
33 150 -55 ~ 150 mJ mJ V/ns W W/ A UNIT V V 1 2 3 1.
GATE 2.
DRAIN 3.
SOURCE P Q TO-220AB Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RthJC RthJA 0.
75 62.
5 /W /W * : Drain current limited by maximum junction temperature.
PIN CONNECTION D G S 2011.
1.
14 Revision No : 0 1/7 Free Datasheet http://www.
datasheet4u.
com/ KU047N08P ELECTRICAL CHARACTERISTICS (Tc=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN.
TYP.
MAX.
UNIT Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance BVDSS BVDSS/ Tj IDSS Vth IGSS RDS(ON) ID=250 A, VGS=0V ID=5mA, Referenced to 25 VDS=75V, VGS=0V, VDS=VGS, ID=250 A VGS= 20V, VDS=0V VGS=10V, ID=65A 75 2.
0 0.
07 3.
9 10 4.
0 100 4.
7 V V/ A V...


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