FDP12N50 / FDPF12N50 N-Channel MOSFET
June 2007
FDP12N50 / FDPF12N50
N-Channel MOSFET
500V, 11.
5A, 0.
65Ω Features
• RDS(on) = 0.
55Ω (Typ.
)@ VGS = 10V, ID = 6A • Low gate charge ( Typ.
22nC) • Low Crss ( Typ.
11pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant
UniFETTM
tm
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for ...