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FDP12N50F

Fairchild Semiconductor
Part Number FDP12N50F
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Oct 6, 2013
Detailed Description FDP12N50F / FDPF12N50FT N-Channel MOSFET December 2007 UniFETTM FDP12N50F / FDPF12N50FT N-Channel MOSFET 500V, 11.5A, ...
Datasheet PDF File FDP12N50F PDF File

FDP12N50F
FDP12N50F

Overview
FDP12N50F / FDPF12N50FT N-Channel MOSFET December 2007 UniFETTM FDP12N50F / FDPF12N50FT N-Channel MOSFET 500V, 11.
5A, 0.
7Ω Features • RDS(on) = 0.
59Ω ( Typ.
)@ VGS = 10V, ID = 6A • Low gate charge ( Typ.
21nC) • Low Crss ( Typ.
11pF) • Fast switching • 100% avalanche tested • Improve dv/dt capability • RoHS compliant tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficient switching mode power supplies and active power factor correction.
D G G D S TO-220 FDP Series GD S TO-220F FDPF Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gat...


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