Part Number
|
ICE4N70 |
Manufacturer
|
Icemos |
Description
|
N-Channel Enhancement Mode MOSFET |
Published
|
Oct 8, 2013 |
Detailed Description
|
Preliminary Data Sheet
ICE4N70 ICE4N70 N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on) • Ultra Low Gate Charge...
|
Datasheet
|
ICE4N70
|
Overview
Preliminary Data Sheet
ICE4N70 ICE4N70 N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized design for high performance power systems
HALOGEN
Product Summary ID V(BR)DSS rDS(on)
FREE
TA=25oC ID=250uA VGS=10V VDS=480V
D
4A 700V 1.
0Ω 21nC
Max Min Typ Typ
Qg
G S
T0220
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS.
THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE.
THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TA...
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