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ICE4N70FP

Icemos
Part Number ICE4N70FP
Manufacturer Icemos
Description N-Channel Enhancement Mode MOSFET
Published Oct 8, 2013
Detailed Description Preliminary Data Sheet ICE4N70FP ICE4N70FP N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Ch...
Datasheet PDF File ICE4N70FP PDF File

ICE4N70FP
ICE4N70FP

Overview
Preliminary Data Sheet ICE4N70FP ICE4N70FP N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized design for high performance power systems HALOGEN Product Summary ID V(BR)DSS rDS(on) FREE TA=25oC ID=250uA VGS=10V VDS=480V D 4A 700V 1.
0Ω 21nC Max Min Typ Typ Qg G S ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS.
THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE.
THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
T0220 Full-PAK Isolated (T0-220) 1=Gate, 2=Drain, 3=Source Maximum ratings b Parameter , at Tj=25oC, unless otherwise specified Symbol Conditions Value Unit Continuous drain current Pulsed drain current Avalanche energy, single pulse ID ID, pulse E AS Tc=25oC Tc=25oC ID=2A 4 12 ...


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