2SJ676
TOSHIBA Field Effect
Transistor Silicon P-Channel MOS Type (π−MOS V)
2SJ676
Switching
Regulator, DC/DC Converter and Motor Drive Applications
Unit: mm
z Low drain-source ON-resistance: RDS (ON) = 1.
6 Ω (typ.
) z High forward transfer admittance: |Yfs| = 2.
0 S (typ.
) z Low leakage current: IDSS = −100 μA (max) (VDS = −200 V) z Enhancement mode: Vth = −1.
5 to −3.
5 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage
Drain current
DC (Note 1) Pulse(Note 1)
Drain power dissipation
Single-pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanch...