isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCES= 1700V (Min) ·Built-in Damper Didoe ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high voltage, high power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
1700
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current- Continuous
8
A
PC
Collector Power Dissipation @ TC=25℃
50
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-45~150
℃
2SC3659
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iscsemi.
com
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isc Silicon
NPN Power
Transistor
2...