SMD Type
Transistors IC
NPN Epitaxial Planar Silicon
Transistor 2SC3661
SOT-23
Unit: mm
Low frequency general-purpose amplifiers, drivers, muting circuit.
+0.
1 2.
4-0.
1
Adoption of FBET process.
High DC current gain (hFE=800 to 3200).
Low collector-to-emitter saturation voltage (VCE(sat) High VEBO (VEBO 15V).
0.
5V).
+0.
1 1.
3-0.
1
1
+0.
1 0.
95-0.
1 +0.
1 1.
9-0.
1
2
0.
55
0.
4
Features
+0.
1 2.
9-0.
1 +0.
1 0.
4-0.
1
3
+0.
05 0.
1-0.
01
+0.
1 0.
97-0.
1
1.
Base 2.
Emitter 3.
collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperatur...