isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 800V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for ultrahigh-definition color display horizontal
deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base voltage
6
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
16
A
125
W
150
℃
Tstg
...