isc Silicon
PNP Power
Transistor
2SB941
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= -1.
2V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type 2SD1266 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low-frequency power amplifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-3
A
ICM
Collector Current-Peak
Collector Power Dissipation @ Ta=25℃
PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-5
A
2 W
35
150
℃
Tstg...