isc Silicon
PNP Power
Transistor
2SB944
DESCRIPTION ·Low Collector Saturation Voltage
: VCE(sat)= -0.
5V(Max)@ IC= -3A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V (Min) ·Good Linearity of hFE ·Complement to Type 2SD1269 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-130
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-4
A
ICM
Collector Current-Peak
Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation
@ Ta=25℃
TJ
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