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2SB921

Part Number 2SB921
Manufacturer Inchange Semiconductor
Description Silicon PNP Power Transistor
Published Oct 25, 2013
Detailed Description isc Silicon PNP Power Transistor 2SB921 DESCRIPTION ·High Collector Current: IC= -7A ·Low Collector Saturation Voltage...
Datasheet 2SB921




Overview
isc Silicon PNP Power Transistor 2SB921 DESCRIPTION ·High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE(sat)= -0.
5V(Max)@IC= -4A ·Complement to Type 2SD1237 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for large current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak Total Power Dissipation @ TC=25℃ PC Total Power Dissipation @ Ta=25℃ TJ Junction Temperature -12 A 40 W 1.
75 150 ℃ ...






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