2SB1119/2SD1619
Elektronische Bauelemente
RoHS Compliant Product
D D1 A
PNP Silicon Medium Power
Transistor
SOT-89
E1
FEATURES
b1
Power dissipation P CM : 500mW˄Tamb=25ć˅ 1.
BASE Collector current 2.
COLLECTOR A ICM : -1 3.
EMITTER Collector-base voltage V VB(BR)CBO : -25 Operating and storage junction temperature range TJˈTstg: -55ć to +150ć
b
L
E
e e1
C
Dimensions In Millimeters Symbol A b b1 c D D1 E E1 e e1 L 2.
900 0.
900 Min 1.
400 0.
320 0.
360 0.
350 4.
400 1.
400 2.
300 3.
940 1.
500TYP 3.
100 1.
100 Max 1.
600 0.
520 0.
560 0.
440 4.
600 1.
800 2.
600 4.
250 Min
Dimensions In Inches Max 0.
063 0.
020 0.
022 0.
017 0.
181 0.
071 0.
102 0.
167 0.
060TYP 0.
114 0.
035 0.
122 0.
043
0.
055 0.
013 0.
0...