2SB1302

2SB1300 : .

2SB1301 : .

2SB1302 : Ordering number : EN2555B 2SB1302 SANYO Semiconductors DATA SHEET 2SB1302 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • DC-DC converters, motor drivers, relay drivers, lamp drivers. Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Large current capacity. • Fast switching speed. • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Tempera.

2SB1302 : DATA SHEET www.onsemi.com Bipolar Transistor –20 V, –5 A, Low VCE(sat), PNP Single PCP 2SB1302 Features • Adoption of FBET, MBIT Processes • Large Current Capacity • Ultrasmall Size Making it Easy to Provide High−Density Small−Sized Hybrid IC’s • Low Collector to Emitter Saturation Voltage • Fast Switching Speed • These Devices are Pb−Free and are RoHS Compliant Applications • DC−DC Converters, Motor Drivers, Relay Drivers, Lamp Drivers SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Symbol Value Unit Collector to Base Voltage VCBO −25 V Collector to Emitter Voltage VCEO −20 V Emitter to Base Voltage VEBO −5 V Collector Current IC −5 A Collector Current.

2SB1308 : Transistors 2SB1308 2SD1963 (94S-166-B204) (94S-342-D204) 290 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit.

2SB1308 : Power Transistor(-50V,-3A) FEATURES  Low saturation voltage,typically VCE(sat)=-0.45(Max) at IC/IB=-1.5A/-0.15A Pb Lead-free  Excellent DC current gain characterisitics.  Complementary the 2SD1963. Production specification 2SB1308 ORDERING INFORMATION Type No. Marking 2SB1308 BFP/BFQ/BFR SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -20 V VEBO IC PC Emitter-Base Voltage Collector Current –DC -Pulse Collector power Dissipation -6 V -3 A -5 0.5 W Tj,Tstg Junction and Storage Temperature -55 to+150 ℃ E077 Rev.A www.gmesemi.com 1 Producti.

2SB1308 : WILLAS SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE FM120-M+ 2SB1308 THRU FM1200-M+ Pb Free Product TRANS•FIBSeaTtaOchtRuprr(oPeceNssPs )design, excellent power dissipation offers FEATURbEetSter reverse leakage current and thermal resistance. z Po•wLoeoprwtimTpirrzoaefniblseoissaurtodrfraspceacmeo. unted application in order to z Ex•cLeollwenpot wDeCr locsusr,rheinght Geffaiciniency. z Lo••wHHCiiggohh lscleuurcrgrteeonrct-acepamapbaitibtlieitlyirt.yS, laotwufroartwioanrdVvoollttaaggeedrop. z Pb•-GFuraeredripngafcokr oavgeervoilstaagevparioltaebctlioen. Ro••HSUSilltircapohnriogehdp-iutsapcxetiaefldopsrlawpnitaacrhcciknhigi.

2SB1308 : Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors 2SB1308 FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: TRANSISTOR (PNP) SOT-89 1. BASE 0.5 -3 -30 W (Tamb=25℃) A V 2. COLLECTOR 1 3. EMITTER 2 3 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency * Measured using pulse current. unless otherwise specified) Test conditions MIN -30 -2.

2SB1308 : SMD Type Power Transistor 2SB1308 Transistors Features Low saturation voltage, typically VCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(Pulse) Collector power dissipation Junction temperature Storage temperature * Single pulse, Pw=10ms Symbol VCBO VCEO VEBO IC ICP * PC Tj Tstg Rating -30 -20 -6 -3 -5 0.5 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutof.

2SB1308 : 2SB1 308 TRANSISTOR SOT-89-3L 1. BASE FEATURES z Power Transistor z Excellent DC current Gain z Low Collector-emitter Saturation Voltage MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -30 -20 -6 -3 500 250 150 -55~+150 2. COLLECTOR 3. EMITTER Unit V V V A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown vo.

2SB1308-HF : SMD Type PNP Transistors 2SB1308-HF Transistors ■ Features ● Power Transistor ● Excellent DC current Gain ● Low Collector-emitter Saturation Voltage ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1.70 0.1 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature range Symbol VCBO VCEO VEBO IC PC RθJA TJ Tstg Rating -30 -20 -6 -3 500 250 150 -55 to 150 Unit V A mW ℃/W ℃ ■ Electrical Characteristics .

2SB1308-P : MCC Micro Commercial Components TM
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SB1308-P 2SB1308-Q 2SB1308-R PNP Plastic-Encapsulate Transistors Features • • • • • • • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Power dissipation: PCM = 0.5W(Tamb=25ć) Collector current: ICM = -3A Collector-base voltage: V(BR)CBO = -30V Operating and storage junction temperature range TJ, Tstg: -55ć to + 150ć Parameter Collector-Emitter Voltage (IC=-50­A, IE=0) Collector-Base Voltage (IC=-1mA, IB=0) Emitter-Base .

2SB1308-Q : MCC Micro Commercial Components TM
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SB1308-P 2SB1308-Q 2SB1308-R PNP Plastic-Encapsulate Transistors Features • • • • • • • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Power dissipation: PCM = 0.5W(Tamb=25ć) Collector current: ICM = -3A Collector-base voltage: V(BR)CBO = -30V Operating and storage junction temperature range TJ, Tstg: -55ć to + 150ć Parameter Collector-Emitter Voltage (IC=-50­A, IE=0) Collector-Base Voltage (IC=-1mA, IB=0) Emitter-Base .

2SB1308-R : MCC Micro Commercial Components TM
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SB1308-P 2SB1308-Q 2SB1308-R PNP Plastic-Encapsulate Transistors Features • • • • • • • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Power dissipation: PCM = 0.5W(Tamb=25ć) Collector current: ICM = -3A Collector-base voltage: V(BR)CBO = -30V Operating and storage junction temperature range TJ, Tstg: -55ć to + 150ć Parameter Collector-Emitter Voltage (IC=-50­A, IE=0) Collector-Base Voltage (IC=-1mA, IB=0) Emitter-Base .