SMD Type
Transistors IC
PNP Epitaxial Planar Silicon
Transistors 2SB1527
SOT-23
+0.
1 2.
9-0.
1 +0.
1 0.
4-0.
1
Unit: mm
Features
+0.
1 2.
4-0.
1
Low saturation voltage.
Contains a diode between collector and emitter.
Contains a bias resistor between base and emitter.
Large current capacity.
Compact package making it easy to realize highdensity,
+0.
1 1.
3-0.
1
1
+0.
1 0.
95-0.
1 +0.
1 1.
9-0.
1
2
0.
55
0.
4
3
+0.
05 0.
1-0.
01
+0.
1 0.
97-0.
1
1.
Base 2.
Emitter 3.
collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VC...