SMD Type
Silicon
NPN Epitaxial 2SC3011
SOT-23
+0.
1 2.
9-0.
1 +0.
1 0.
4-0.
1
Transistors IC
Unit: mm
Features
+0.
1 2.
4-0.
1
1
+0.
1 0.
95-0.
1 +0.
1 1.
9-0.
1
2
High fT : fT=6.
5GHz
0.
55
Low Noise Figure: NF=2.
3dB(Typ.
) f=1GHz
+0.
1 1.
3-0.
1
High Gain :|S21e|2=12dB(TYP.
)
0.
4
3
+0.
05 0.
1-0.
01
+0.
1 0.
97-0.
1
1.
Base 2.
Emitter 3.
collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Rating 20 7 3 30 10 150 125 -55 to +125 Unit V V V mA mA mW
Electrical Characteristics Ta = 25
Parameter Co...