isc Silicon
NPN RF
Transistor
INCHANGE Semiconductor
2SC3512
DESCRIPTION ·Low Noise and High Gain
NF = 1.
6 dB TYP.
@f = 900 MHz PG = 10.
5 dB TYP.
@f = 900 MHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS ·Designed for use in low-noise and small signal amplifiers
from VHF ~ UHF band.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
15
V
VCEO Collector-Emitter Voltage
11
V
VEBO
Emitter-Base Voltage
2
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
50
mA
0.
6
W
150
℃
Tstg
Storage Temperature Range
-55~1...