isc Silicon
NPN Power
Transistor
2SC3514
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 180V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1383 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Adudio frequency power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
180
V
VCEO Collector-Emitter Voltage
180
V
VEBO Emitter-Base Voltage
5.
0
V
IC
Collector Current-Continuous
0.
1
A
Collector Power Dissipation@ Ta=25℃
1.
5
PC
W
Collector Power Dissipation@TC=25℃
10
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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