SMD Type
Transistors IC
NPN Epitaxial Planar Silicon
Transistor 2SC4695
SOT-23
Unit: mm
+0.
1 2.
9-0.
1 +0.
1 0.
4-0.
1
Adoption of FBET process.
+0.
1 2.
4-0.
1
High DC current gain.
High VEBO (VEBO 25V).
+0.
1 1.
3-0.
1
1
+0.
1 0.
95-0.
1 +0.
1 1.
9-0.
1
2
0.
55
0.
4
Features
3
High reverse hFE (150 typ).
Small ON resistance [Ron=1W (IB=5mA)].
+0.
05 0.
1-0.
01
+0.
1 0.
97-0.
1
1.
Base 2.
Emitter 3.
collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 50 20 25 500 800...