AON6426L N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AON6426L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
Features
VDS (V) = 30V ID = 24A RDS(ON) 5.
5mΩ RDS(ON) 7.
5mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.
5V)
- RoHS Compliant - Halogen Free
100% UIS Tested! 100% R g Tested!
Top View Fits SOIC8 footprint !
S S S G D D D D G
D
DFN5X6 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current ...