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AON6426L

Alpha & Omega Semiconductors
Part Number AON6426L
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Oct 31, 2013
Detailed Description AON6426L N-Channel Enhancement Mode Field Effect Transistor General Description The AON6426L combines advanced trench MO...
Datasheet PDF File AON6426L PDF File

AON6426L
AON6426L

Overview
AON6426L N-Channel Enhancement Mode Field Effect Transistor General Description The AON6426L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
Features VDS (V) = 30V ID = 24A RDS(ON) < 5.
5mΩ RDS(ON) < 7.
5mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.
5V) - RoHS Compliant - Halogen Free 100% UIS Tested! 100% R g Tested! Top View Fits SOIC8 footprint ! S S S G D D D D G D DFN5X6 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.
1mH C TC=25° Power Dissipation B Power Dissipation A C S Maximum 30 ±20 24 19 130 14 11 42 88 42 17 2 1.
2 -55 to 150 Units V V A VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAR EAR PD PDSM TJ, TSTG A A mJ W W ° C TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 24 53 2.
6 Max 30 64 3 Units ° C/W ° C/W ° C/W Alpha & Omega Semiconductor, Ltd.
www.
aosmd.
com Free Datasheet http://www.
datasheet4u.
com/ AON6426L Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55° C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.
5V, ID=20A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V C TJ=125° 1.
3 130 4.
5 6.
8 6 53 0.
7 1 40 1930 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.
7 290 230 1.
4 37 VGS=10V, VDS=15V, ID=20A 18 4.
8 11 8.
1 VGS=10V, VDS=15V, RL=0.
75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 8.
6 29 8 14 40 17 2.
1 45 2300 5.
5 8.
2 7.
5 1.
8 Min 30 Typ 36.
7 1 5 100 ...


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