SMD Type
Silicon
NPN Epitaxial
Transistor 2SD1033
TO-252
+0.
15 1.
50 -0.
15
Transistors
Unit: mm 2.
30
+0.
8 0.
50-0.
7 +0.
1 -0.
1
6.
50 +0.
2 5.
30-0.
2
+0.
15 -0.
15
Features
High Voltage VCEO=150V
+0.
2 9.
70 -0.
2 +0.
15 0.
50 -0.
15 +0.
15 5.
55 -0.
15
+0.
1 0.
80-0.
1
0.
127 max
2.
3
+0.
15 4.
60-0.
15
+0.
1 0.
60-0.
1
+0.
28 1.
50 -0.
1
+0.
25 2.
65 -0.
1
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current *1 Collector current Collector power dissipation Ta = 25 Junction temperature Storage temperature * PW 10ms,Duty Cycle 50% *2 Symbol VCBO VCEO VEBO ICP IC PT Tj Tstg Rating 200 150 5 3 2 ...