DF N1 01
PBSS5260QA
28 August 2013
0D -3
60 V, 1.
7 A
PNP low VCEsat (BISS)
transistor
Product data sheet
1.
General description
PNP low VCEsat Breakthrough In Small Signal (BISS)
transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
NPN complement: PBSS4260QA.
2.
Features and benefits
• • • • • • •
Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) area requirements Solderable side pads AEC-Q101 qualified
3.
Applications
• •...