TPC8061-H
TOSHIBA Field Effect
Transistor Silicon N-Channel MOS Type (U-MOS VI-H)
TPC8061-H
High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications
Unit: mm
• Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 3.
5 nC (typ.
) • Low drain-source ON-resistance:
RDS (ON) = 21 mΩ (typ.
) (VGS = 4.
5 V) • Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.
3 to 2.
3 V (VDS = 10 V, ID = 0.
1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage
Drain current
DC (Note 1) Pulsed (...