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TPC8061-H

Part Number	TPC8061-H
Manufacturer	Toshiba
Description	Silicon N-Channel MOSFET
Published	Nov 11, 2013
Detailed Description	TPC8061-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS VI-H) TPC8061-H High Efficiency DC-DC Conve...
Datasheet	TPC8061-H PDF File

Overview

TPC8061-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS VI-H) TPC8061-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 3.
5 nC (typ.
) • Low drain-source ON-resistance: RDS (ON) = 21 mΩ (typ.
) (VGS = 4.
5 V) • Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.
3 to 2.
3 V (VDS = 10 V, ID = 0.
1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulsed (...

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TPC8061-H Silicon N-Channel MOSFET - Toshiba

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