TPC8405
TOSHIBA Field Effect
Transistor Silicon N, P Channel MOS Type (P Channel U−MOS IV/N Channel U-MOS III)
TPC8405
Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PC Applications
z Low drain-source ON resistance : P Channel RDS (ON) = 25 mΩ (typ.
) N Channel RDS (ON) = 20 mΩ (typ.
) z High forward transfer admittance : P Channel |Yfs| = 12S (typ.
) N Channel |Yfs| = 14S (typ.
) z Low leakage current : P Channel IDSS = −10 μA (VDS = −30 V) N Channel IDSS = 10 μA (VDS = 30 V) z Enhancement-mode : P Channel Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −1 mA) N Channel Vth = 1.
3 to 2.
5 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Charac...