Part Number
|
TPCC8136 |
Manufacturer
|
Toshiba |
Description
|
Silicon P-Channel MOSFET |
Published
|
Nov 11, 2013 |
Detailed Description
|
MOSFETs Silicon P-Channel MOS (U-MOS)
TPCC8136
1. Applications
• Power Management Switches
2. Features
(1) Small footpr...
|
Datasheet
|
TPCC8136
|
Overview
MOSFETs Silicon P-Channel MOS (U-MOS)
TPCC8136
1.
Applications
• Power Management Switches
2.
Features
(1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 13 mΩ (typ.
) (VGS = -4.
5 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) (4) Enhancement mode: Vth = -0.
5 to -1.
2 V (VDS = -10 V, ID = -1 mA)
3.
Packaging and Internal Circuit
TPCC8136
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
TSON Advance
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power d...
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