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TPCC8137

Toshiba Semiconductor
Part Number TPCC8137
Manufacturer Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Published Aug 30, 2014
Detailed Description MOSFETs Silicon P-Channel MOS (U-MOS) TPCC8137 1. Applications • Power Management Switches 2. Features (1) Small, thin ...
Datasheet PDF File TPCC8137 PDF File

TPCC8137
TPCC8137

Overview
MOSFETs Silicon P-Channel MOS (U-MOS) TPCC8137 1.
Applications • Power Management Switches 2.
Features (1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 8.
0 mΩ (typ.
) (VGS = -4.
5 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) (4) Enhancement mode: Vth = -0.
5 to -1.
2 V (VDS = -10 V, ID = -1 mA) 3.
Packaging and Internal Circuit TPCC8137 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS -20 V Gate-source voltage VGSS ±12 Drain current (DC) (Note 1) ID -13 A Drain current (pulsed) (Note 1) IDP -39 ...


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