SMD Type
Transistors
NPN Epitaxial Planar Silicon
Transistor 2SD1623
Features
Adoption of FBET, MBIT processes.
Low collector-to-emitter saturation voltage.
Large current capacity and wide ASO.
Fast switching speed.
The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’ s further miniaturization.
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperature * Mounted on ceramic board(250mm2X0.
8mm) Symbol VCBO VCEO VEBO IC ICP PC PC * Tj Tstg Rating 60 50 6 2 4 0.
5 1.
3 150 -55 to +150 Unit V...