33N25

FDB33N25 250V N-Channel MOSFET September 2005 UniFET FDB33N25 250V N-Channel MOSFET Features • 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V • Low gate charge ( typical 36.8 nC) • Low Crss ( typical 39 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transistors are prod...