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33N10

Inchange Semiconductor
Part Number 33N10
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET Transistor
Published Jul 26, 2016
Detailed Description isc N-Channel MOSFET Transistor FEATURES · Static drain-source on-resistance: RDS(on) ≤60mΩ · Enhancement mode · Fast S...
Datasheet PDF File 33N10 PDF File

33N10
33N10

Overview
isc N-Channel MOSFET Transistor FEATURES · Static drain-source on-resistance: RDS(on) ≤60mΩ · Enhancement mode · Fast Switching Speed · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION · Switching power supplies,converters,AC and DC motor controls ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 33 IDM Drain Current-Single Pulsed 132 PD Total Dissipation @TC=25℃ 150 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.
0 62.
5 UNIT ℃/W ℃/W 33N10 isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL ...


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