Part Number
|
NTJD5121N |
Manufacturer
|
ON Semiconductor |
Description
|
Power MOSFET |
Published
|
Nov 17, 2013 |
Detailed Description
|
NTJD5121N
60 V, 295 mA, Dual N−Channel with ESD Protection, SC−88
Features
Power MOSFET
• • • • •
Low RDS(on) Low Gat...
|
Datasheet
|
NTJD5121N
|
Overview
NTJD5121N
60 V, 295 mA, Dual N−Channel with ESD Protection, SC−88
Features
Power MOSFET
• • • • •
Low RDS(on) Low Gate Threshold Low Input Capacitance ESD Protected Gate This is a Pb−Free Device
http://onsemi.
com
V(BR)DSS 60 V RDS(on) MAX 1.
6 W @ 10 V 2.
5 W @ 4.
5 V ID Max 295 mA
Applications
• Low Side Load Switch • DC−DC Converters (Buck and Boost Circuits)
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State t≤5s TA = 25°C TA = 85°C TA = 25°C TA = 85°C Power Dissipation (Note 1) Steady State t≤5s Pulsed Drain Current tp = 10 ms IDM TJ, TSTG IS TL ESDHBM ESDMM TA = 25°C PD Symbol VDS...
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