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NTJD5121N

ON Semiconductor
Part Number NTJD5121N
Manufacturer ON Semiconductor
Description Power MOSFET
Published Nov 17, 2013
Detailed Description NTJD5121N 60 V, 295 mA, Dual N−Channel with ESD Protection, SC−88 Features Power MOSFET • • • • • Low RDS(on) Low Gat...
Datasheet PDF File NTJD5121N PDF File

NTJD5121N
NTJD5121N

Overview
NTJD5121N 60 V, 295 mA, Dual N−Channel with ESD Protection, SC−88 Features Power MOSFET • • • • • Low RDS(on) Low Gate Threshold Low Input Capacitance ESD Protected Gate This is a Pb−Free Device http://onsemi.
com V(BR)DSS 60 V RDS(on) MAX 1.
6 W @ 10 V 2.
5 W @ 4.
5 V ID Max 295 mA Applications • Low Side Load Switch • DC−DC Converters (Buck and Boost Circuits) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State t≤5s TA = 25°C TA = 85°C TA = 25°C TA = 85°C Power Dissipation (Note 1) Steady State t≤5s Pulsed Drain Current tp = 10 ms IDM TJ, TSTG IS TL ESDHBM ESDMM TA = 25°C PD Symbol VDSS VGS ID Value 60 ±20 295 212 304 219 250 266 900 −55 to 150 210 260 2000 200 mA 1 mW Unit V V mA D2 3 G1 2 S1 1 SC−88 (SOT−363) 6 D1 5 G2 4 S2 Top View MARKING DIAGRAM & PIN ASSIGNMENT D1 G2 S2 6 TF M G G 1 S1 G1 D2 = Device Code = Date Code = Pb−Free Package Operating Junction and Storage ...


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