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Part Number
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H4435S |
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Manufacturer
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Hi-Sincerity Mocroelectronics |
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Description
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P-Channel Enhancement-Mode MOSFET |
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Published
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Dec 1, 2013 |
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Detailed Description
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200101) Issued Date : 2008.01.12 Revised Date :2009.02.06 Page No. :...
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Datasheet
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H4435S
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Overview
HI-SINCERITY
MICROELECTRONICS CORP.
Spec.
No.
: MOS200101) Issued Date : 2008.
01.
12 Revised Date :2009.
02.
06 Page No.
: 1/5
H4435S
P-Channel Enhancement-Mode MOSFET (-30V, -9.
1A)
•
8-Lead Plastic SO-8 Package Code: S
H4435S Symbol & Pin Assignment
Features
• RDS(on)=20mΩ@VGS=-10V, ID=-9.
1A • RDS(on)=35mΩ@VGS=-4.
5V, ID=-6.
9A • Advanced trench process technology • High Density Cell Design for Ultra Low On-Resistance
5 6 7 8
4 3 2 1
Pin 1 / 2 / 3: Source Pin 4: Gate Pin 5 / 6 / 7 / 8: Drain
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Symbol VDS VGS ID IDM PD Tj, Tstg RθJA Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) Drain Current (Pulsed)
*1 o
Pa...
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