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H4435S

Hi-Sincerity Mocroelectronics
Part Number H4435S
Manufacturer Hi-Sincerity Mocroelectronics
Description P-Channel Enhancement-Mode MOSFET
Published Dec 1, 2013
Detailed Description HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200101) Issued Date : 2008.01.12 Revised Date :2009.02.06 Page No. :...
Datasheet PDF File H4435S PDF File

H4435S
H4435S

Overview
HI-SINCERITY MICROELECTRONICS CORP.
Spec.
No.
: MOS200101) Issued Date : 2008.
01.
12 Revised Date :2009.
02.
06 Page No.
: 1/5 H4435S P-Channel Enhancement-Mode MOSFET (-30V, -9.
1A) • 8-Lead Plastic SO-8 Package Code: S H4435S Symbol & Pin Assignment Features • RDS(on)=20mΩ@VGS=-10V, ID=-9.
1A • RDS(on)=35mΩ@VGS=-4.
5V, ID=-6.
9A • Advanced trench process technology • High Density Cell Design for Ultra Low On-Resistance 5 6 7 8 4 3 2 1 Pin 1 / 2 / 3: Source Pin 4: Gate Pin 5 / 6 / 7 / 8: Drain Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol VDS VGS ID IDM PD Tj, Tstg RθJA Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) Drain Current (Pulsed) *1 o Parameter Ratings -30 ±20 -9.
1 -50 2.
5 -55 to +150 50 Units V V A A W °C °C/W Total Power Dissipation @TA=25 C Operating and Storage Temperature Range Thermal Resistance Junction to Ambient (PCB mounted)*2 *1: Maximum DC current limited by the package *2: 1-in2 2oz Cu PCB board H4435S HSMC Product Specification Free Datasheet http://www.
datasheet4u.
com/ HI-SINCERITY MICROELECTRONICS CORP.
Electrical Characteristics (TA=25°C, unless otherwise noted) Symbol • Static BVDSS RDS(on) VGS(th) IDSS IGSS gFS • Dynamic Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time VDD=-15V, RL=15Ω, ID=-1A, VGEN=-10V, RG=3.
3Ω VDS=-25V, VGS=0V, f=1MHz VDS=-24V, ID=-7.
0A, VGS=-4.
5V Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Forward Transconductance VGS=0V, ID=-250uA VGS=-10V, ID=-9.
1A VGS=-4.
5V, ID=-6.
9A VDS=VGS, ID=-250uA VDS=-30V, VGS=0V VGS=±20V, VDS=0V VDS=-10V, ID=-9.
1A 30 -1 Characteristic Test Conditions Min.
Spec.
No.
: MOS200101) Issued Date : 2008.
01.
12 Revised Date :2009.
02.
06 Page No.
: 2/5 Typ.
...


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