Si2301ADS New Product Vishay Siliconix P-Channel 2.
5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) 0.
130 @ VGS = –4.
5 V 0.
190 @ VGS = –2.
5 V ID (A)b –2.
0 –1.
6 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2301DS (1A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C PD TJ, Tstg TA= 25_C TA= 70_C ID IDM IS –0.
75 0.
9 0.
57 –55 to 150 Symbol VDS VGS 5 sec –20 "8 –2.
0 –1.
6 –10 Steady State Unit V –1.
75 –1.
4 A –0.
6 ...

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