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SI2301ADS

Vishay
Part Number SI2301ADS
Manufacturer Vishay
Description P-Channel MOSFET
Published Dec 13, 2013
Detailed Description Si2301ADS New Product Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) 0.130 @ V...
Datasheet PDF File SI2301ADS PDF File

SI2301ADS
SI2301ADS

Overview
Si2301ADS New Product Vishay Siliconix P-Channel 2.
5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) 0.
130 @ VGS = –4.
5 V 0.
190 @ VGS = –2.
5 V ID (A)b –2.
0 –1.
6 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2301DS (1A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C PD TJ, Tstg TA= 25_C TA= 70_C ID IDM IS –0.
75 0.
9 0.
57 –55 to 150 Symbol VDS VGS 5 sec –20 "8 –2.
0 –1.
6 –10 Steady State Unit V –1.
75 –1.
4 A –0.
6 0.
7 0.
45 W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc Notes a.
Pulse width limited by maximum junction temperature.
b.
Surface Mounted on FR4 Board, t v 5 sec.
c.
Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.
vishay.
com/www/product/spice.
htm Document Number: 71835 S-20617—Rev.
B, 29-Apr-02 www.
vishay.
com RthJA Symbol Typical 115 140 Maximum 140 175 Unit _C/W 1 Free Datasheet http://www.
datasheet4u.
com/ Si2301ADS Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID = –250 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "8 V VDS = –16 V, VGS = 0 V VDS = –16 V, VGS = 0 V, TJ = 55_C VDS v –5 V, VGS = –4.
5 V ID(on) VDS v –5 V, VGS = –2.
5 V VGS = –4.
5 V, ID = –2.
8 A rDS(on) gfs VSD VGS = –2.
5 V, ID = –2.
0 A VDS = –5 V, ID = –2.
8 A IS = –0.
75 A, VGS = 0 V –6 –3 0.
093 0.
140 6.
5 –0.
80 –1.
2 0.
130 0.
190 W S V A –20 –0.
45 –0.
95 "100 –1 –10 mA V nA Symbol Test Conditions Min Typ Max Unit On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage Dyn...


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