SMD Type
MOS Field Effect
Transistors 2SJ605
TO-263
+ 0 .
1 1 .
2 7 -0 .
1
Transistors IC
Unit: mm
+0.
1 1.
27-0.
1 +0.
2 4.
57-0.
2
Features
Super low on-state resistance: RDS(on)1 = 20 m RDS(on)2 = 31 m MAX.
(VGS = -10 V, ID = -33 A)
+ 0 .
2 8 .
7 -0 .
2
MAX.
(VGS = -4.
0 V, ID = -33 A)
Low input capacitance Ciss = 4600 pF TYP.
(VDS = -10 V, VGS = 0 A)
+0.
1 1.
27-0.
1
0.
1max
+0.
1 0.
81-0.
1
2.
54
+0.
2 -0.
2 +0.
1 5.
08-0.
1
+ 0 .
2 2 .
5 4 -0 .
2
Built-in gate protection diode
+ 0 .
2 5 .
2 8 -0 .
2
+ 0 .
2 1 5 .
2 5 -0 .
2
2.
54
+0.
2 0.
4-0.
2
Absolute Maximum Ratings Ta = 25
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(pulse) *1 Total Power Dissipation Channel T...