SMD Type
MOS Field Effect
Transistor 2SJ604
TO-263
+0.
1 1.
27-0.
1
MOSFET
Unit: mm
+0.
1 1.
27-0.
1 +0.
2 4.
57-0.
2
Features
Low on-resistance RDS(on)1 =30 m RDS(on)2 = 43m MAX.
(VGS =-10 V, ID = -23A) MAX.
(VGS = -4.
0 V, ID =-23 A)
+0.
2 8.
7-0.
2
+0.
1 1.
27-0.
1
0.
1max
+0.
1 0.
81-0.
1
+0.
2 5.
28-0.
2
Low Ciss: Ciss = 3300 pF TYP.
Built-in gate protection diode
2.
54 5.
08
+0.
1 -0.
1
+0.
2 2.
54-0.
2
+0.
2 15.
25-0.
2
+0.
2 2.
54-0.
2
+0.
2 0.
4-0.
2
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s, duty cycle 1% Symbol VDSS VGSS ID ID PD PD Tch T...