SMD Type
MOS Field Effect
Transistor 2SJ601
TO-252
+0.
15 1.
50-0.
15
+0.
15 6.
50-0.
15 +0.
2 5.
30-0.
2 +0.
1 2.
30-0.
1 +0.
8 0.
50-0.
7
IC MOSFET
Features
Low on-resistance RDS(on)1 = 31 m RDS(on)2 = 46m MAX.
(VGS =-10 V, ID = -18 A)
Unit: mm
+0.
2 9.
70-0.
2
+0.
1 0.
80-0.
1
+0.
28 1.
50-0.
1
+0.
25 2.
65-0.
1
Built-in gate protection diode
2.
3
+0.
15 4.
60-0.
15
+0.
15 0.
50-0.
15
Low Ciss: Ciss = 3300 pF TYP.
0.
127 max
+0.
15 5.
55-0.
15
1 Gate 2 Drain 3 Source
+0.
1 0.
60-0.
1
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s, duty cycle 1% Symbol ...