isc Silicon
NPN Darlington Power
Transistor
2SD1195
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min) ·High DC Current Gain
: hFE= 1500(Min) @IC= 2.
5A ·Low Saturation Voltage ·Complement to Type 2SB885 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay
drivers, voltage
regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
110
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
5
A
ICP
Collector Current-Peak
Collector Power Dissipation
...