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Part Number
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IRF8852PBF |
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Manufacturer
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International Rectifier |
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Description
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HEXFET Power MOSFET |
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Published
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Jan 10, 2014 |
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Detailed Description
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PD - 96246
IRF8852PbF
l l l l l l
Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (...
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|
Datasheet
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IRF8852PBF
|
Overview
PD - 96246
IRF8852PbF
l l l l l l
Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile ( 1.
1mm) Available in Tape & Reel Lead-Free
HEXFET® Power MOSFET
VDSS 25V
RDS(on) max 11.
3m @VGS = 10V 15.
4m @VGS = 4.
5V
: :
Id 7.
8A 6.
2A
Description
HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the
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designer with an extremely efficient and reliable device for battery and load management.
Th...
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