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IRF8852PBF

International Rectifier
Part Number IRF8852PBF
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Jan 10, 2014
Detailed Description PD - 96246 IRF8852PbF l l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (<...
Datasheet PDF File IRF8852PBF PDF File

IRF8852PBF
IRF8852PBF

Overview
PD - 96246 IRF8852PbF l l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (< 1.
1mm) Available in Tape & Reel Lead-Free HEXFET® Power MOSFET VDSS 25V RDS(on) max 11.
3m @VGS = 10V 15.
4m @VGS = 4.
5V : : Id 7.
8A 6.
2A Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the ! " # Ã2Ã9 !Ã2ÃT "Ã2ÃT #Ã2ÃB ' & % $ 'Ã2Ã9! &Ã2ÃT! %Ã2ÃT! $Ã2ÃB! designer with an extremely efficient and reliable device for battery and load management.
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