Part Number
|
IXTN60N50L2 |
Manufacturer
|
IXYS |
Description
|
Power MOSFET |
Published
|
Jan 12, 2014 |
Detailed Description
|
Preliminary Technical Information
Linear L2TM Power MOSFET
N-Channel Enhancement Mode Extended FBSOA
IXTN60N50L2
VDSS...
|
Datasheet
|
IXTN60N50L2
|
Overview
Preliminary Technical Information
Linear L2TM Power MOSFET
N-Channel Enhancement Mode Extended FBSOA
IXTN60N50L2
VDSS ID25
RDS(on)
= = ≤
500V 53A 100mΩ
miniBLOC, SOT-227 E153432
S G
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD VISOL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C
Maximum Ratings 500 500 ±30 ±40 53 150 60 3 735 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A J W °C °C °C °C °C V~ V~ Nm/lb.
in.
Nm/lb.
in.
g
S D G = Gate S = Source D = Drain
Either source terminal S can be used as the source terminal or the Kelvin source (gate ...
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