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IXTN60N50L2

IXYS
Part Number IXTN60N50L2
Manufacturer IXYS
Description Power MOSFET
Published Jan 12, 2014
Detailed Description Preliminary Technical Information Linear L2TM Power MOSFET N-Channel Enhancement Mode Extended FBSOA IXTN60N50L2 VDSS...
Datasheet PDF File IXTN60N50L2 PDF File

IXTN60N50L2
IXTN60N50L2

Overview
Preliminary Technical Information Linear L2TM Power MOSFET N-Channel Enhancement Mode Extended FBSOA IXTN60N50L2 VDSS ID25 RDS(on) = = ≤ 500V 53A 100mΩ miniBLOC, SOT-227 E153432 S G Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings 500 500 ±30 ±40 53 150 60 3 735 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A J W °C °C °C °C °C V~ V~ Nm/lb.
in.
Nm/lb.
in.
g S D G = Gate S = Source D = Drain Either source terminal S can be used as the source terminal or the Kelvin source (gate ...


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