Transistor
2SD1450
Silicon
NPN epitaxial planer type
For low-frequency amplification
Unit: mm
4.
0±0.
2
3.
0±0.
2 0.
7±0.
1
s Features
q q q
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (Ta=25˚C) Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings 25 20 12 1 0.
5 300 150 –55 ~ +150
Unit V V V A A mW ˚C ˚C
1:Emitter 2:Collector 3:Base
1
2
3
1.
27 1.
27 2.
54±0.
15
EIAJ:SC–72 New S Type Package
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward cu...