PD - 97577
INSULATED GATE BIPOLAR
TRANSISTOR Features
• • • • • • • • • Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of The Parts Tested for ILM Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution Lead Free Package
IRGP4066PbF IRGP4066-EPbF
C
VCES = 600V IC(Nominal) = 75A
G E
tSC ≥ 5μs, TJ(max) = 175°C
n-channel
VCE(on) typ.
= 1.
7V
Benefits
• High Efficiency in a Wide Range of Applications • Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses • Rugged Transient Performance for Increased Reliability • Excellent Current Sharing in Paral...