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IRGP4066-EPBF

Part Number	IRGP4066-EPBF
Manufacturer	International Rectifier
Description	INSULATED GATE BIPOLAR TRANSISTOR
Published	Feb 5, 2014
Detailed Description	PD - 97577 INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low Switchi...
Datasheet	IRGP4066-EPBF PDF File

Overview

PD - 97577 INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of The Parts Tested for ILM Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution Lead Free Package IRGP4066PbF IRGP4066-EPbF C VCES = 600V IC(Nominal) = 75A G E tSC ≥ 5μs, TJ(max) = 175°C n-channel VCE(on) typ.
= 1.
7V Benefits • High Efficiency in a Wide Range of Applications • Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses • Rugged Transient Performance for Increased Reliability • Excellent Current Sharing in Parallel Operation C E C G TO-247AC IRGP4066PbF C E C G TO-247AD IRGP4066-EPbF G Gate C Collector E Emitter Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C INOMINAL ICM ILM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Nominal Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw 300 (0.
063 in.
(1.
6mm) from case) 10 lbf·in (1.
1 N·m) Max.
600 140 90 75 225 300 ±20 ±30 454 227 -55 to +175 Units V c A V W °C Thermal Resistance Parameter RθJC RθCS RθJA Thermal Resistance Junction-to-Case f Min.
––– ––– ––– Typ.
––– 0.
24 ––– Max.
0.
33 ––– 40 Units °C/W Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) 1 www.
irf.
com 10/8/2010 Free Datasheet http://www.
datasheet4u.
net/ IRGP4066PbF/IRGP4066-EPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)CES ΔV(BR)CES/ΔTJ Min.
600 — — — — 4.
0 — — — — — Typ.
...

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IRGP4066-EPBF INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

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