INCHANGE Semiconductor
isc Product Specification
isc Silicon
NPN Power
Transistor
2SC2929
DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching
regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VCBO VCEO VCEO(SUS) VEBO IC IB
B
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range
VALUE 450 400 400 7 3 1 40 150 -45~150
UNIT V V V V A ...