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C2911

Sanyo Semicon Device
Part Number C2911
Manufacturer Sanyo Semicon Device
Description 2SC2911
Published Jan 28, 2015
Detailed Description Ordering number:ENN779D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1209/2SC2911 160V/140mA High-Voltage Switching ...
Datasheet PDF File C2911 PDF File

C2911
C2911


Overview
Ordering number:ENN779D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1209/2SC2911 160V/140mA High-Voltage Switching and AF 100W Predriver Applications Features · Adoption of FBET process.
· High breakdown voltage.
· Good linearity of hFE and small Cob.
· Fast switching speed.
Package Dimensions unit:mm 2009B [2SA1209/2SC2911] 8.
0 4.
0 2.
7 1.
5 3.
0 7.
0 11.
0 1.
6 0.
8 0.
8 0.
6 3.
0 0.
5 15.
5 ( ) : 2SA1209 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C 12 3 2.
4 4.
8 Conditions Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=(–)80V, IE=0 Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 DC Current Gain hFE VCE=(–)5V, IC=(–)10mA Gain-Bandwidth Product fT VCE=(–)10V, IC...



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